SiC Defect Mapping Process
The SiC puck scanning applies advanced 3D metrology to map internal defects in SiC before wafering.
- 3D Scanning: The SiC puck is scanned to create a detailed 3D map of internal defects.
- Digital Twin: Defects are identified, classified, and precisely localized to build a digital replica of the puck, that can be easily shared.
- Optimized Processing: The YieldPro™ software simulates multiple slicing strategies to maximize the number of defect-free wafers. Depending on the wafering method, the software highlights areas to skip (laser cutting) or the wafers to discard early (wire sawing).
- Automated Material Qualification: Both the puck and its future wafers are assigned a quality grade using customizable protocols.
- Yield Estimation: The software evaluates wafering profitability by factoring in wafer market value along with slicing and polishing costs.
- Objective Feedback to Growers: Recorded defect patterns provide input for data-driven optimization of SiC crystal growth.
Overall, the process ensures early defect detection, optimized wafering strategy, and higher-profitability for SiC substrates.
Industries
Silicon carbide is a wide bandgap semiconductor enabling smaller, more efficient power electronics to operate under harsher conditions and at higher temperatures than silicon. These advantages have driven rapid adoption everywhere where power density and reliability matter.
- Automotive & e-Mobility
- Charging Infrastructure
- Renewable Energy & Storage
- Grid & Power Infrastructure
- Rail & Industrial Drives
- Telecom & 5G
SAM 301 SiC
In traditional SiC substrate production, the first comprehensive control of internal defects takes place at wafer level, when substantial resources have already been spent for processing. The new SAM 301 SiC Scanner solves this problem by delivering fast, non-destructive, 3D visualization of defects at the puck stage. This allows to identify and sort out defective pucks before they enter costly processing cycle, and optimize processing for the remaining material. It results in lower production costs, higher yield, and smaller environmental footprint while ensuring the stringent quality standards.
The SAM 301 SiC scanner visualizes most internal defects in SiC pucks - polytypes, micropipes, dislocation bundles, inclusions / points.
Built for early-stage evaluation, it helps you:
- visualize “killer” defects before wafering
- prevent too defective pucks from entering the costly production
- optimize downstream processing
- provide quick, objective feedback to the crystal growth team
While designed for the maximum detectability at the puck stage, SAM 301 SiC complements – but does not replace – post-wafering inspection.
The advantages at a glance
- Early, non-destructive 3D inspection at the puck stage reveals defects before wafering.
- 3D maps + customizable grading standardize go/no-go decisions for both pucks and future wafers.
- Profit-aware downstream processing with automated yield estimates
- Smaller environmental footprint by avoiding unnecessary processing on defective material.
- Recorded defect patterns provide objective analytics to guide crystal growth tuning.
Product data
| Puck dimensions: | The standard system comes with holders for 6 and 8 inches, allowing thicknesses from 5 to 45 mm. |
| Puck geometry: | Cylindrical with one, two, or no flats. |
| Puck surface: | Both sides flat-ground, free of foreign material. Optical polishing is not required. |
| Scanning time: | ~1 h 20 min for 6 inch and ~2 h for 8 inch. |